Fermi energy dependence of linewidth enhancement factor of GaAlAs buried heterostructure lasers
- 1 November 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9) , 905-907
- https://doi.org/10.1063/1.95974
Abstract
The linewidth enhancement factor α is measured in a number of GaAlAs lasers with different internal losses. It is found that α decreases monotonically with the increase of the loss (Fermi energy level) in agreement with the theoretical prediction. On the basis of these results the design of cavity length and mirror reflection in order to reduce the spectral linewidth of the laser output is discussed.Keywords
This publication has 5 references indexed in Scilit:
- Semiclassical theory of noise in semiconductor lasers - Part IIIEEE Journal of Quantum Electronics, 1983
- On the linewidth enhancement factor α in semiconductor injection lasersApplied Physics Letters, 1983
- Measurement of the linewidth enhancement factor α of semiconductor lasersApplied Physics Letters, 1983
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- Fundamental line broadening of single-mode (GaAl)As diode lasersApplied Physics Letters, 1981