Theory of Paramagnetic Impurities in Semiconductors
- 1 November 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Mathematical Physics
- Vol. 7 (11) , 2045-2052
- https://doi.org/10.1063/1.1704887
Abstract
In this paper, a model of a paramagnetic impurity in a semiconductor (or of an F′ center in an alkali halide) is proposed. It is an exactly soluble form of the quantum‐mechanical 3‐body problem. Specifically, we deal with 2 interacting particles in any number of dimensions in an attractive external potential, and present the qualitative features of the resulting eigenvalues and eigenfunctions. We find algebraically the conditions for a magnetic moment to appear (e.g., for an F′ center to become unstable with respect to an F center) and discover that even a large 2‐body electronic repulsion U does not cause a moment to appear when the one‐electron bound state orbits about the impurity are sufficiently great. Conversely, in the case of small, tightly bound orbits, beyond a certain value of U, the impurity does in fact become magnetic in the ground state. Using the exact ground‐state solution, we show that a perturbation‐theoretic expansion in powers of U has a finite radius of convergence.Keywords
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