Nitrogen Ion Implantation in Silicon: Structure of the Subsurface Region
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High resolution analytical electron microscopyUltramicroscopy, 1982
- Formation of silicon nitride compound layers by high-dose nitrogen implantationJournal of Applied Physics, 1980
- Epitaxial silicon layers grown on ion-implanted silicon nitride layersApplied Physics Letters, 1973