Multistep junction termination extension for SiCpower devices

15 March 2001

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 37 (6) , 392-393
https://doi.org/10.1049/el:20010258

Abstract

A multistep junction termination extension (MJTE) for SiC power devices, which uses a single-step ion implantation and multiple dry etches, is studied by way of two-dimensional numerical simulations and confirmed by fabricating and measuring a high-voltage implanted 4H-SiC pin diode. It is shown that MJTE is a very effective approach and can be easily implemented in experiment.

Keywords

MULTISTEP JUNCTION TERMINATION EXTENSION
SINGLE-STEP ION IMPLANTATION
TWO-DIMENSIONAL NUMERICAL SIMULATIONS
REVERSE J-V CURVES
SIC
EQUIPOTENTIAL LINES
SIC POWER DEVICES
HIGH-VOLTAGE IMPLANTED 4H-SIC PIN DIODE
MULTIPLE DRY ETCHES
BREAKDOWN VOLTAGE

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