Laplace transform deep-level transient spectroscopic studies of defects in semiconductors
- 1 July 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 194-198
- https://doi.org/10.1063/1.357126
Abstract
A quantitative improvement in deep‐level transient spectroscopy (DLTS) resolution has been demonstrated by using Laplace transform method for the emission rate analysis. Numerous tests performed on the software used for the calculations as well as on the experimental setup clearly demonstrated that in this way the resolution of the method can be increased by more than an order of magnitude. Considerable confidence in this approach was gained through measurements of a selection of well‐characterized point defects in various semiconductors. The results for platinum in silicon and EL2 in GaAs are presented. For each of these cases conventional DLTS give broad featureless lines, while Laplace DLTS reveals a fine structure in the emission process producing the spectra.This publication has 16 references indexed in Scilit:
- A novel algorithm for higher order filtering in DLTSSolid-State Electronics, 1992
- Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularization methodJournal of Physics: Condensed Matter, 1992
- Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in AsPhysical Review Letters, 1992
- Optimization of the energy resolution of deep level transient spectroscopyJournal of Applied Physics, 1987
- Refinements in the method of moments for analysis of multiexponential capacitance transients in deep-level transient spectroscopyJournal of Applied Physics, 1987
- Real and apparent effects of strong electric fields on the electron emission from midgap levels EL2 and EL0 in GaAsApplied Physics Letters, 1984
- CONTIN: A general purpose constrained regularization program for inverting noisy linear algebraic and integral equationsComputer Physics Communications, 1982
- A constrained regularization method for inverting data represented by linear algebraic or integral equationsComputer Physics Communications, 1982
- Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductorPhysical Review B, 1982
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974