Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators
- 4 May 2012
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (10) , 11478-11486
- https://doi.org/10.1364/oe.20.011478
Abstract
We show enhanced optical bistability induced by free carrier absorption from junction doping in substrate-removed silicon ring modulators. Such linear thermal effects dominate the loss in high-speed depletion silicon ring modulators. Optical bistability was observed with about 100 μW of input optical power. We further show that such thermal interactions causes data-dependent ring resonance shifts, and consequently severely degrade the data modulation quality at low speeds. The frequency response of this effect was measured to be about 100~200 kHz.Keywords
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