Analysis of field distributions in a GaAs m.e.s.f.e.t. at large drain voltages
- 11 November 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (23) , 622-624
- https://doi.org/10.1049/el:19760475
Abstract
Electric-field distributions and carrier-density distributions in a GaAs m.e.s.f.e.t. at large drain voltages are investigated with a new analytical model, which takes account of the electron-drift-velocity saturation with negative differential mobility and the extension of a depletion layer towards the drain electrode.Keywords
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