Ballistic and near ballistic transport in GaAs

1 August 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (8) , 147-148
https://doi.org/10.1109/edl.1980.25267

Abstract

Calculations which take into account collisions and intervally transfer in GaAs indicate that the electron transport in short GaAs structures is near-ballistic. High drift velocities (in excess of 5-107cm/s) may be achieved leading to potentially superior device performance.

Keywords

BALLISTIC TRANSPORT
GALLIUM ARSENIDE
POISSON EQUATIONS
MONTE CARLO METHODS
SCATTERING
VOLTAGE
SOLIDS
ELECTRON DEVICES
EFFECTIVE MASS
STEADY-STATE

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