Ordering and shape of self-assembled InAs quantum dots on GaAs(001)
- 11 April 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (16) , 2229-2231
- https://doi.org/10.1063/1.126305
Abstract
Quantitative grazing-incidence small-angle x-ray scattering experiments have been performed on self-assembled InAs quantum dots (QDs) grown by molecular-beam epitaxy. We find pronounced nonspecular diffuse scattering satellite peaks with high diffraction orders, indicating a lateral ordering in the spatial positions of the InAs QDs. The mean-dot–dot distance and correlation lengths of the dot lateral distribution are found to be anisotropic. We observe the sharpest dot distribution in the [110] direction. Additional broad diffraction peaks are observed and associated with dot facet crystal truncation rods of the {111} and {101} facet families. This suggests an octagonal-based dot shape.Keywords
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