Large-signal theory for rectangular-voltage operation of a uniform avalanche zone in IMPATT diodes
- 8 April 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (7) , 154-156
- https://doi.org/10.1049/el:19710100
Abstract
Explicit solutions are derived for the currents in a lightly doped high-field zone of an IMPATT diode subject to constant E field avalanche. Resulting particle-current waveforms, diode impedances and r.f. powers are calculated for Si and GaAs with the avalanche period followed by a sudden transition to a low-voltage carrier-extraction period. It is concluded that the addition of a drift zone will only ease impedance matching and enhance efficiency when differences of either ionisation rates or drift velocities between electrons and holes exist.Keywords
This publication has 1 reference indexed in Scilit:
- Noise in IMPATT oscillator at large r.f. amplitudesElectronics Letters, 1971