Shear piezoelectric coefficients of gallium nitride and aluminum nitride
- 20 December 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (25) , 3965-3967
- https://doi.org/10.1063/1.125508
Abstract
We have developed a direct method of measuring the shear strain using a laser-based interferometer. The method was applied to the measurement of the d15 coefficient for wurtzite GaN and AlN. A value for d15 of 3.6±0.2 pm V−1 for AlN has been obtained, in good agreement with values quoted in the literature. The value of d15 for GaN has also been measured to be 3.1±0.2 pm V−1.Keywords
This publication has 6 references indexed in Scilit:
- First-principles study on electronic and elastic properties of BN, AlN, and GaNJournal of Applied Physics, 1998
- Piezoelectric, dielectric, and interfacial properties of aluminum nitride filmsJournal of Vacuum Science & Technology A, 1998
- The piezoelectric coefficient of gallium nitride thin filmsApplied Physics Letters, 1998
- Interferometric measurements of electric field-induced displacements in piezoelectric thin filmsReview of Scientific Instruments, 1996
- Simple, high-resolution interferometer for the measurement of frequency-dependent complex piezoelectric responses in ferroelectric ceramicsReview of Scientific Instruments, 1995
- Laser interferometer for the study of piezoelectric and electrostrictive strainsJournal of Applied Physics, 1988