Electric Field Measurements In Photoconductive GaAs Switches
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 105-108
- https://doi.org/10.1109/ppc.1991.733244
Abstract
The Frum-Keldysh effect has been used to measure the electric field distribution in a photoconductive gallium arsenide switch. The results indicate the build-up of electric fields at the anode during lock-on and subsequent dielectric breakdown leading to current filamentation. The diagnostic technique, which has a temporal resolution given by the probe laser, can be extended to provide information on the carrier density distribution and the temperature distribution in the gallium arsenide switch.Keywords
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