3dB coupler-balanced pin pair JFET circuit integrated on InP for coherent detection

Abstract
A 3dB directional coupler and a balanced pin diode pair have been monolithically integrated in the InGaAs/InGaAsP/InP material system, together with the preamplifier front-end: a JFET and a load resistor. All the layers were grown in a single MOCVD epitaxy run. At 1.55μm, this integrated receiver coupled to a hybrid GaAs amplifier exhibits a 3dB bandwidth of 2GHz with a very low average input noise of 9pA√Hz in the 130MHz–2GHz range, and a common mode rejection ratio below −20dB.

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