Characterisation of double quantum well GaAs/AlGaAs diode lasers
- 21 July 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (15) , 952-953
- https://doi.org/10.1049/el:19880648
Abstract
High-power, double quantum well, separate confinement GaAs/AlGaAs diode lasers are characterised by power against current and spectral measurements. Short cavity length devices exhibit lower threshold current densities than equivalent single-quantum-well devices. Unlike singlequantum- well devices, no n = 2 transitions are observed even for devices as short as 150 μm at 80°C. These devices are more suitable for monolithic surface-emitting applications.Keywords
This publication has 0 references indexed in Scilit: