Surface sputtering rate reduction and its effect on SIMS depth profiling in cesium-ion-bombarded GaAs

1 March 1985

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 3 (2) , 351-355
https://doi.org/10.1116/1.573219

Abstract

Distortions in secondary ion mass spectrometry (SIMS) depth profiles due to nonuniform sputtering rates have been studied in GaAs crystals bombarded by a cesium ion beam. It is found that a significant sputtering rate reduction occurs in Cs+-beam-bombarded GaAs in a depth range of about 0.1 μm from the surface. In contrast, sputtering rates are almost constant for O+2- and Ar+-beam bombardment. Auger electron spectroscopy results show that the surface composition is greatly distorted in Cs+-beam-bombarded GaAs crystals. Preferential sputtering may be responsible for the surface sputtering rate reduction. It is shown that the sputtering rate reduction causes a depth scale error in the SIMS depth profile.

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