Noise in phosphorus-implanted buried channel MOS transistors
- 31 December 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (12) , 1195-1196
- https://doi.org/10.1016/0038-1101(80)90112-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Flicker Noise in Electronic DevicesPublished by Elsevier ,1979
- IVa-4 low frequency noise characteristics of ion implanted "Buried channel" NMOS devicesIEEE Transactions on Electron Devices, 1977
- Limiting flicker noise in MOSFETsSolid-State Electronics, 1975