Deposition, Structure, and Properties of Cermet Thin Films Composed of Ag and Y‐Stabilized Zirconia

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Abstract
(YSZ) cermet thin films have been deposited by reactive magnetron cosputtering from Ag and Zr/Y targets in mixtures. The deposition conditions were such that the YSZ component in the films was fully oxidized. The film densities varied from ≈75% to >85% as the total pressure was decreased from 20 to 5 mTorr. Film resistivities ρ varied with Ag volume fraction from . For , ρ decreased rapidly with increasing . For , ρ decreased more gradually with increasing . ρ in annealed films ranged from for for pure Ag. Long term (>100 h) annealing at ≥ 700°C resulted in a gradual increase in cermet resistivity due to Ag evaporation and Ag segregation to surface islands. Both decomposition mechanisms were effectively suppressed at up to 750°C by depositing a 1 μm thick porous perovskite cap layer on the cermet. Complex impedance spectroscopy measurements in air of cermet electrodes on YSZ electrolytes gave interfacial resistances that were a factor of ≈6 lower than those of pure Ag electrodes, e.g., 1.4 Ω‐cm2 at 750°C. Ag‐YSZ cermets thus have potential as high‐conductivity, low‐overpotential air electrode materials for solid‐oxide electrochemical devices operating at temperatures ≤750°C.

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