Transit time in the base region of drift transistors considering recombination and variable mobility
- 31 May 1974
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (5) , 507-509
- https://doi.org/10.1016/0038-1101(74)90084-7
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Transit time in the base region of drift transistors considering diffusion, recombination, and variable built-in electric fieldIEEE Transactions on Electron Devices, 1970
- The transit time in transistorsProceedings of the IEEE, 1963