Impurity Redistribution and Junction Formation in Silicon by Thermal Oxidation
- 29 July 1960
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 39 (4) , 933-946
- https://doi.org/10.1002/j.1538-7305.1960.tb03947.x
Abstract
In the process of growing an oxide on doped silicon, electrically active impurities near the silicon/silicon dioxide interface are redistributed according to the diffusion coefficients and the distribution coefficient of the impurity between the oxid...Keywords
This publication has 2 references indexed in Scilit:
- Properties of Silicon and Germanium: IIProceedings of the IRE, 1958
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956