GaAs FET distributed amplifier

25 June 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (13) , 433
https://doi.org/10.1049/el:19810303

Abstract

The design and construction of a GaAs FET distributed amplifier with a bandwidth of 6 GHz is described The amplifier provides an input VSWR of less than 1.8:1 and noise figure of 3–6 dB The possibility of bandwidth extension is discussed.

Keywords

SOLID STATE MICROWAVE CIRCUIT
GAAS
DESIGN
DISTRIBUTED AMPLIFIER
CONSTRUCTION
FET
6 GHZ
BANDWIDTH EXTENSION