Transistor characterization by effective large-signal two-port parameters
- 1 April 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 5 (2) , 77-79
- https://doi.org/10.1109/JSSC.1970.1050076
Abstract
A method is proposed of transistor characterization by effective large-signal parameters measured under the condition of sinusoidal port voltages. It is anticipated that this form of active-device description will find application in the computer design of narrow-frequency-band constant-amplitude nearly sinusoidal amplifiers and oscillators.Keywords
This publication has 1 reference indexed in Scilit:
- On Oscillator Design for Maximum PowerIEEE Transactions on Circuit Theory, 1968