Fine structures of indirect exciton absorption in phosphorus-doped silicon
- 1 May 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 16 (9) , 1105-1108
- https://doi.org/10.1016/0038-1098(75)90015-0
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 9 references indexed in Scilit:
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