Effect Of Silicon Emissivity On Temperature Measurement And Control In Rapid Thermal Processing
- 6 April 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1189, 64-71
- https://doi.org/10.1117/12.963959
Abstract
The effective emissivity of silicon varies with both temperature and the backside roughness of a wafer. Both of these variations need to be accounted for in the calibration of infrared optical pyrometers used in rapid thermal processing. A fully integrated hardware and software approach is described which calibrates the optical pyrometer over a temperature range of 350°C to 1275°C and provides for recalibration due to wafer to wafer variations in effective emissivity based on room temperature optical characterization of wafer backsides.Keywords
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