Defect diffusion during ion implantation into GaAs
- 16 April 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 76 (2) , K197-K201
- https://doi.org/10.1002/pssa.2210760266
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Radiation damage and near edge optical properties of nitrogen implanted gallium arsenidePhysica Status Solidi (a), 1982
- Anomalous Diffusion of Defects in Ion-Implanted GaAsPublished by Springer Nature ,1971
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969