Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
- 8 August 2003
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 18 (9) , 864-869
- https://doi.org/10.1088/0268-1242/18/9/309
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Intermediate order in tetrahedrally coordinated silicon: evidence for chainlike objectsSolar Energy Materials and Solar Cells, 2003
- Step-by-step excimer laser induced crystallization of a-Si:HApplied Physics Letters, 2000
- Raman microspectroscopy study of processing-induced phase transformations and residual stress in siliconSemiconductor Science and Technology, 1999
- Raman microspectroscopy study of processing-induced phase transformations and residual stress in siliconSemiconductor Science and Technology, 1999
- Micro-Raman analysis of residual stresses and phase transformations in crystalline silicon under microindentationJournal of Materials Research, 1997
- Phase transformations of silicon caused by contact loadingJournal of Applied Physics, 1997
- Phase transformations during microcutting tests on siliconApplied Physics Letters, 1996
- Structure and properties of silicon XII: A complex tetrahedrally bonded phasePhysical Review B, 1995
- Reversible pressure-induced structural transitions between metastable phases of siliconPhysical Review B, 1994
- The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductorsSolid State Communications, 1986