X and Ku-Band Dual Gate MESFET Oscillators Stabilized Using Dielectric Resonators
- 1 September 1981
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 469-474
- https://doi.org/10.1109/euma.1981.332945
Abstract
Stable X- and Ku-band oscillators have been realized using GaAs dual gate MESFETs with a geometry of 2 × 0.8 μm × 150 μm. Frequency stability was obtained by coupling the second gate with Ba2Ti9020 dielectric resonators. The design was accomplished by an experimental large signal analysis technique. The achieved output power at 10.8 GHz, 14.2 GHz and 18.05 GHz was 14 to 16 mW and the frequency stability was 0.5 to 4 ppm/K in the -20°C to + 80°C temperature range. Due to critical coupling, the values of Qext were between 1000 and 2000. Drain bias pushing at 18.05 GHz was as low as 300 kHz/V.Keywords
This publication has 4 references indexed in Scilit:
- Stabilised FET oscillator with input dielectric resonator: large signal designElectronics Letters, 1981
- A Highly Stabilized GaAs FET Oscillator Using a Dielectric Resonator Feedback Circuit in 9-14 GHzIEEE Transactions on Microwave Theory and Techniques, 1980
- A Highly Stabilized Low-Noise GaAs FET Integrated Oscillator with a Dielectric Resonator in the C BandIEEE Transactions on Microwave Theory and Techniques, 1978
- A single-tuned oscillator for IMPATT characterizationsProceedings of the IEEE, 1970