Modified theory of the current/voltage relation in silicon p – n junctions
- 23 August 1968
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 4 (17) , 359-360
- https://doi.org/10.1049/el:19680282
Abstract
If the theory of Sah, Noyce and Shockley is modified by assuming the recombination centres to be nonuniformly distributed, a current/voltage relation can be obtained in the form I ∝ exp (eV/mkT), where m lies between 1 and 2.Keywords
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