Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
- 1 April 1997
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 23 (4) , 305-306
- https://doi.org/10.1134/1.1261822
Abstract
It has been shown that lasing may be achieved in structures with submonolayer CdSe inclusions in a ZnMgSSe matrix at above-room temperatures without additional optical confinement of the active region by thick layers of lower refractive index. The temperature dependence of the excitation density at the lasing threshold is typical of structures with three-dimensional carrier localization.Keywords
This publication has 4 references indexed in Scilit:
- Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrixApplied Physics Letters, 1996
- Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloysJournal of Crystal Growth, 1996
- Exciton-related lasing mechanism in ZnSe-(Zn,Cd)Se multiple quantum wellsPhysical Review B, 1993
- Hot excitons in semiconductorsPhysica Status Solidi (b), 1975