Reactive Ion Etching of Indium-Based III-V Materials using CH4-H2-Ar Mixtures
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gasElectronics Letters, 1987
- Reactive ion etching of GaAs using a mixture of methane and hydrogenElectronics Letters, 1987