Abstract
Transmission-electron-microscopy observations reveal that the controlled solid-phase crystallization of amorphous Si thin films, which is exclusively initiated at the artificial nucleation sites, results in a log-normal size distribution of crystallites. The experimental observations can be fully described by a nucleation and growth theory developed by considering the interaction between the dynamics of nucleation and growth and that of the nucleation site depletion. Contrary to prevalent views, the formation of log-normal size distributions in phase transformations thus can be a consequence of the interplay between the dynamics of nucleation and growth and that of the nucleation site depletion, without involving any coarsening process.