Room temperature continuous wave lasing characteristicsofGaInAsP/InP microdisk injection laser
- 5 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (3) , 278-279
- https://doi.org/10.1049/el:19980109
Abstract
The authors have achieved continuous-wave lasing in a GaInAsP/InP microdisk injection laser at room temperature for the first time. A record low threshold current of 150 µA was demonstrated at a wavelength of 1.63 µm with a high cavity Q of 3300.Keywords
This publication has 2 references indexed in Scilit:
- Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 μmIEEE Photonics Technology Letters, 1997
- Room temperature operation of microdisc lasers with submilliamp threshold currentElectronics Letters, 1992