Light scattering from defects in crystals: Scattering by dislocations
- 1 October 1991
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 64 (4) , 425-445
- https://doi.org/10.1080/13642819108215267
Abstract
A basic equation for light scattering by anisotropic scatterers in crystals is obtained using the Born approximation and applied to the scattering behaviour from edge dislocations in sapphire crystals. The orientation and polarization direction dependences of the scattered light, measured by laser scattering tomography, are compared with the calculated results and it is confirmed that the scattering is generated by changes in the dieletric constant caused by the strain field around the dislocation lines.Keywords
This publication has 23 references indexed in Scilit:
- In situ observation of internal structure in growing ice crystals by laser scattering tomographyJournal of Crystal Growth, 1990
- In-Situ Observation of Moving Dislocations in KCl Crystal by Laser-Light TopographyJapanese Journal of Applied Physics, 1989
- Optical investigation of inhomogeneities of crystals grown by various methodsJournal of Crystal Growth, 1968
- On the motion of dislocations in corundum crystals grown by the verneuil methodJournal of Crystal Growth, 1968
- Photoelastic Properties of Selected Materials and Their Relevance for Applications to Acoustic Light Modulators and ScannersJournal of Applied Physics, 1967
- Photoelastic Properties of Sapphire (α-Al2O3)Journal of Applied Physics, 1967
- Some dislocation interactions in simple ionic crystalsPhilosophical Magazine, 1959
- The existence of microcracks after cold-workPhilosophical Magazine, 1957
- XXV. The direct observation of dislocation nets in rock salt single crystalsPhilosophical Magazine, 1956
- Photographs of the Stress Field Around Edge DislocationsPhysical Review B, 1956