Revision of H2 passivation of P b interface defects in standard (111)Si/SiO2
- 6 May 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (19) , 2723-2725
- https://doi.org/10.1063/1.115577
Abstract
Passivation with molecular H2 of Pb interface defects in thermal (111)Si/SiO2 (dry; 870 °C) over extended temperature (TH) and time (tH) ranges unveil nonexponential decay of [Pb] vs tH. This contrasts with previously reported exponential behavior, shown to have resulted from inadvertent incorrect monitoring of [Pb] and limited TH and tH ranges. The previous defect‐H2 reaction limited model may still consistently account for the data if expanded by the revealed spread of 0.06 eV around the inferred mean activation energy Ef=1.51 eV vis‐à‐vis the previous single‐valued Ef=1.66 eV; The inferred pre‐exponential factor is now found in compliance with the model. However, results may encourage re‐evaluation of other models previously discarded on the basis of their nonexponential passivation prediction.Keywords
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