Comparison of phase modulation of GaAs/AlGaAs double heterostructures
- 3 December 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (25) , 1391-1392
- https://doi.org/10.1049/el:19870960
Abstract
The performance of double-heterostructure GaAs/AlxGa1−xs phase modulators with different doping profiles are systematically compared. The largest phase modulation of l.75rad/V mm at a wavelength of 1.09μm was obtained with an active layer doped at n=3 × 1017cm−3. However, an intrinsic active layer gives the lowest characteristic modulation energy needed for high-frequency modulation.Keywords
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