Approximations to Fermi-Dirac integrals and their use in device analysis

1 May 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 70 (5) , 516-518
https://doi.org/10.1109/proc.1982.12337

Abstract

A simple,single-expression approximation is derived for the Fermi-Dirac (F-D) Integral F1/2(x) in the range -4 ≤ x ≤ +12. This approximation is more accurate (less than 1-percent error throughout) and more useful in device analysis and computer modeling. The approximation procedure is general and can be used to find approximations for F-D Integrals of any order and to any arbitrary degree of accuracy.

Keywords

EQUATIONS
CHROMIUM
DIFFUSION PROCESSES
INSTRUMENTS
ELECTRON DEVICES
SEMICONDUCTOR IMPURITIES
NUMERICAL ANALYSIS
SEMICONDUCTOR DEVICES
CHARGE CARRIER DENSITY

This publication has 0 references indexed in Scilit: