Formation of silicon tips with <1 nm radius
- 15 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (3) , 236-238
- https://doi.org/10.1063/1.102841
Abstract
Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.Keywords
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