Modeling and simulation of high-level injection behavior in double heterojunction bipolar transistors
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962