Abstract
It has been demonstrated that dislocations can be revealed as etch pits in copper crystals doped with a small amount of Te. The progress of polygonization of such copper after bending was followed with etch pits and x-ray diffraction. It was found that climbing occurred at 500°C and that polygonization was complete after 2 hr at 1000°C. In similar experiments with three samples of nominally 99.999% copper, the one which was probably purest did not polygonize, while the other two did so. This indicates that if impurity is necessary for polygonization, only a very small amount is required.

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