AC hot-carrier effects in scaled MOS devices
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETsIEEE Transactions on Electron Devices, 1990
- The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990