Novel molecular-beam epitaxially grown GaAs/AlGaAs quantum well structures for infrared detection and integrated optics at 3–5 and 8–12 μm
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 998-1001
- https://doi.org/10.1116/1.586112
Abstract
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