Formation of aluminum silicide between two layers of amorphous silicon

6 April 1987

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 50 (14) , 933-934
https://doi.org/10.1063/1.97984

Abstract

Thin‐film structures of amorphous Si/Al/amorphous Si were deposited consecutively without breaking the vacuum. During annealing to 440 K, Al reacts with Si to form a homogeneous compound layer between the two a‐Si layers. This compound has a unique and well‐defined structure, different from both Al and Si although some similarities exist. The Al silicide observed is stable up to 575 K, at which temperature it dissociates when a‐Si crystallizes.

Keywords

ALUMINIUM SILICIDES
FILM GROWTH
AMORPHOUS STATE
SILICON
ALUMINIUM
SURFACE REACTIONS
LAYERS
SYNTHESIS
LAYERED MATERIALS
CRYSTAL STRUCTURE
SURFACE STRUCTURE
SI [AMORPHOUS]
ALUMINUM SILICIDE

This publication has 2 references indexed in Scilit:

Schottky barrier amorphous-crystalline interface formation
Surface Science, 1983
Metal contact induced crystallization in films of amorphous silicon and germanium
Journal of Non-Crystalline Solids, 1972