On the effect of ambients on the formation of oxygen-related donors in Cz-Si
- 16 August 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 78 (2) , K141-K145
- https://doi.org/10.1002/pssa.2210780258
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Oxygen-Related Donors Formed at 600 °C in Silicon in Dependence on Oxygen and Carbon ContentPhysica Status Solidi (a), 1983
- Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth BehaviorJapanese Journal of Applied Physics, 1982
- On the donor activity of oxygen in silicon at temperatures from 500 to 800 °CPhysica Status Solidi (a), 1981
- On the kinetics of thermal donors in oxygen-rich silicon in the range from 450 to 900°CPhysica Status Solidi (a), 1980
- Effects of ambients on oxygen precipitation in siliconApplied Physics Letters, 1980
- Comparison of two kinds of oxygen donors in silicon by resistivity measurementsJournal of Applied Physics, 1979
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973