The effect of hydrogen on hot carrier radiation immunity of MOS devices
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 511-522
- https://doi.org/10.1016/0169-4332(89)90468-6
Abstract
No abstract availableKeywords
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- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971