Concentration Dependence of a Diffusion Coefficient at Phosphorus Diffusion in Germanium
- 1 August 1978
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 125 (8) , 1307-1309
- https://doi.org/10.1149/1.2131668
Abstract
Phosphorus diffusion into germanium is carried out at 600°–750°C by using red phosphorus powder as a diffusion source. Source temperatures are maintained at 240° and 430°C, corresponding to low and high surface concentrations, respectively. At low surface concentration, , concentration profiles agree well with the erfc curves, showing the behavior of Fick's law. While at high surface concentration, , profiles deviate from the erfc curves. Diffusion coefficients depend both on the local and surface concentrations, representing the same result as that of phosphorus diffusion into silicon.Keywords
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