Effects of V/III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen source
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 897-901
- https://doi.org/10.1016/0022-0248(95)80069-o
Abstract
No abstract availableKeywords
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