Formation of S–GaAs surface bonds

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Abstract
Treating the GaAs surface with Na2S⋅9H2O or (NH4)2S has previously been shown to form a thin layer (∼1 ML) of sulfur bonded to the GaAs surface. The exact nature of this bond is not clear since a number of different bonding energies have been reported. This paper reports the results of an investigation of the formation of S–GaAs bonds using H2S gas as the source of sulfur. The angle resolved x-ray photoelectron spectra show that as the substrate temperature is increased, three different S–GaAs bonding states appear: As–S bonding peaks in the As3d spectra exhibit core level shifts of 1.0 and 1.6 eV, Ga–S bonding causes a core level shift of 0.6 eV. These binding energy shifts (ΔBEs) are approximately the same as those observed for GaAs treated with (NH4)2S or Na2S⋅9H2O although the H2S treated samples yield a much larger amount of S bonding.

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