Transport and level anticrossing in strongly coupled double quantum wells with in-plane magnetic fields
- 15 August 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (7) , 4965-4968
- https://doi.org/10.1103/physrevb.50.4965
Abstract
Interesting in-plane low-temperature transport properties are proposed in doped thin double quantum wells in an in-plane magnetic field (B). The density of states diverges at a saddle point (SP). The SP is formed at the lower edge of the partial energy gap at a sufficiently high B due to an anticrossing of the two displaced energy-dispersion parabolas. At high carrier densities, the conductance (G) shows a maximum when the upper branch is emptied and a minimum at a higher B= when the Fermi level lies at the SP. These features are confirmed by recent data. At low densities (i.e., with only the lower branch populated), only a G minimum is predicted to occur. The electron-diffusion thermopower diverges both above and below with opposite signs. The correlation between the recently observed tunneling G and the in-plane G is discussed.
Keywords
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