High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
- 7 June 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (23) , 3495-3497
- https://doi.org/10.1063/1.124141
Abstract
Unstrained Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As multiple-quantum-well (MQW) structures have been grown by metalorganic vapor phase epitaxy. Low-temperature photoluminescence was performed for these MQW structures. We compared the experimental data with the theoretical calculations. The conduction-band offset ratio of AlInAsSb/InGaAs heterojunction was set as an adjustable parameter in the theoretical model. We estimated the conduction-band offset ratio to be 0.90±0.05 for the Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As heterojunction.Keywords
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