Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped Substrate
- 1 December 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (12)
- https://doi.org/10.1143/jjap.9.1544
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Preparation and Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1969
- Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown FilmsJapanese Journal of Applied Physics, 1968
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962