Measurement of velocity-field characteristic for electrons in indium phosphide
- 1 January 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (1) , 169-171
- https://doi.org/10.1016/0038-1098(72)90373-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- High-field-current instabilities in InPElectronics Letters, 1971
- Observation of high-field domains in n type indium phosphideElectronics Letters, 1971
- Band Structure and High-Field Transport Properties of InPPhysical Review B, 1970
- Instabilities of InP 3-level transferred-electron oscillatorsElectronics Letters, 1970
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- Measurements of the current-field strength characteristic of n-type gallium arsenide using various high-power microwave techniquesIEEE Transactions on Electron Devices, 1967
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963